X-On Electronics has gained recognition as a prominent supplier of BUK9629-100B mosfet across the USA, India, Europe, Australia, and various other global locations. BUK9629-100B mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK9629-100B NXP

BUK9629-100B electronic component of NXP
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Part No.BUK9629-100B
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 100V 46A Automotive 3-Pin(2+Tab) D2PAK
Datasheet: BUK9629-100B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 4.2471 ea
Line Total: USD 38.22

Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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BUK9629-100B N-channel TrenchMOS logic level FET Rev. 02 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175 C - - 100 V V DS j j voltage I drain current V =5V T =25C --46 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --157W tot mb dissipation Static characteristics drain-source V =10V I =25A - 2227m R DSon GS D on-state T =25C j resistance V =5V I =25A - 2429m GS D T =25C see Figure 6 j see Figure 7 D2PAKBUK9629-100B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =46A V 100 V --152mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -13 -nC GD GS D V =80 V T =25C DS j see Figure 8 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9629-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9629-100B All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 9 February 2011 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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