X-On Electronics has gained recognition as a prominent supplier of BUK962R8-30B MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK962R8-30B MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK962R8-30B NXP

BUK962R8-30B electronic component of NXP
BUK962R8-30B NXP
BUK962R8-30B MOSFETs
BUK962R8-30B  Semiconductors

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See Product Specifications
Part No. BUK962R8-30B
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 237A Automotive 3-Pin(2+Tab) D2PAK
Datasheet: BUK962R8-30B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.7422 ea
Line Total: USD 33.68 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
   
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Transistor Polarity
Mounting Style
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
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Pin Count
Type
Number Of Elements
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Drain Source On Volt
Rad Hardened
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We are delighted to provide the BUK962R8-30B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK962R8-30B and other electronic components in the MOSFETs category and beyond.

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BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 14 October 2002 Product data 1. Product prole 1.1 Description N-channel enhancement mode eld-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK952R8-30B in SOT78 (TO-220AB) 2 BUK962R8-30B in SOT404 (D -PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data E 2.3 J R = 2.4 m (typ) DS(AL)S DSon I 75 A P 300 W. D tot 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplied outlines and symbol Pin Description Simplied outline Symbol 1 gate (g) mb mb 1 2 drain (d) d 3 source (s) mb mounting base, g connected to drain (d) 2 MBB076 s 13 MBK116 MBK106 12 3 2 SOT78 (TO-220AB) SOT404 (D -PAK) 1 It is not possible to make connection to pin 2 of the SOT404 package.BUK95/962R8-30B Philips Semiconductors TrenchMOS logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 30 V DS V drain-gate voltage (DC) R =20k -30 V DGR GS V gate-source voltage (DC) - 15 V GS 1 I drain current (DC) T =25 C V =5V - 237 A D mb GS Figure 2 and 3 2 -75 A 2 T = 100 C V =5V Figure 2 -75 A mb GS I peak drain current T =25 C pulsed t 10 s - 950 A DM mb p Figure 3 P total power dissipation T =25 C Figure 1 - 300 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode 1 I reverse drain current (DC) T =25 C - 237 A DR mb 2 -75 A I peak reverse drain current T =25 C pulsed t 10 s - 950 A DRM mb p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I =75A - 2.3 J DS(AL)S D energy V 30 V V =5V R =50 DS GS GS starting T =25 C mb 1 Current is limited by power dissipation chip rating 2 Continuous current is limited by package 9397 750 10273 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 14 October 2002 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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