BYC10D-600 NXP

BYC10D-600 Hyperfast power diode Rev. 1 28 June 2011 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 1.2 Features and benefits Low reverse recovery current and low Reduces switching losses in thermal resistance associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Correction (PFC) power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse --600V RRM voltage I average forward current square-wave pulse = 0.5 --10 A F(AV) T 93 C see Figure 1 mb see Figure 2 Static characteristics V forward voltage I =10A T =25C -2 2.5 V F F j see Figure 5 I =10A T =150 C -1.4 1.8 V F j see Figure 5 Dynamic characteristics t reverse recovery time I =10A V = 400 V -18 -ns rr F R dI /dt = 500 A/s T =25C F j see Figure 6 TO-220ACBYC10D-600 NXP Semiconductors Hyperfast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb mb mounting base connected to cathode 12 SOD59 (TO-220AC) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC10D-600 TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage DC - 500 V R I average forward current square-wave pulse = 0.5 T 93 C -10 A F(AV) mb see Figure 1 see Figure 2 I repetitive peak forward current square-wave pulse = 0.5 t = 25 s -20 A FRM p T 93 C mb I non-repetitive peak forward current t = 8.3 ms sine-wave pulse T =25C -71 A FSM p j(init) see Figure 3 t = 10 ms sine-wave pulse T =25C -65 A p j(init) see Figure 3 T storage temperature -40 150 C stg T junction temperature - 150 C j BYC10D-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 28 June 2011 2 of 11