BYC8DX-600 NXP

BYC8DX-600 Hyperfast power diode Rev. 01 27 December 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits Isolated plastic package Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Correction (PFC) power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak --600V RRM reverse voltage I average forward square-wave pulse =0.5 --8 A F(AV) current T =47C h see Figure 1 see Figure 2 Static characteristics V forward voltage I =8A T =150 C - 1.5 1.85 V F F j see Figure 4 I =8A T =25C - 2 2.9 V F j Dynamic characteristics t reverse recovery I =8A V = 400 V -20 -ns rr F R time dI /dt = 500 A/s T =25C F j see Figure 5 TO-220FBYC8DX-600 NXP Semiconductors Hyperfast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8DX-600 TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac BYC8DX-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 27 December 2010 2 of 11