BYC8X-600,127 NXP

BYC8X-600 Hyperfast rectifier diode, low switching loss Rev. 02 13 March 2009 Product data sheet 1. Product profile 1.1 General description Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits Low reverse recovery current and low Reduces switching losses in thermal resistance associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Correction (PFC) power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 600 V RRM reverse voltage I average forward square-wave pulse = 0.5 --8 A F(AV) current T =59C see Figure 1 h see Figure 2 Dynamic characteristics t reverse recovery I =8A V =400 V -19 - ns rr F R time dI /dt = 500 A/s F T = 25 C see Figure 5 j Static characteristics V forward voltage I =8A T =150 C see - 1.4 1.85 V F F j Figure 4NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8X-600 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting SOD113 hole 2-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse -600 V RRM voltage V crest working reverse -600 V RWM voltage I average forward square-wave pulse =0.5 T = 59 C see Figure -8 A F(AV) h current 1 see Figure 2 I repetitive peak forward square-wave pulse = 0.5 t = 25 s T =59C - 16 A FRM p h current I non-repetitive peak t = 10 ms sine-wave pulse T =25C - 80 A FSM p j(init) forward current t = 8.3 ms sine-wave pulse T =25C - 88 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYC8X-600 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 13 March 2009 2 of 9