Product Information

BYC8X-600,127

BYC8X-600,127 electronic component of NXP

Datasheet
Rectifiers Diode Ult Fast Recov Rectifier 600V 8A

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5609 ea
Line Total: USD 1.56

4208 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4145 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0695
10 : USD 0.8752
100 : USD 0.6958
500 : USD 0.6072
1000 : USD 0.5083
2000 : USD 0.4853
5000 : USD 0.4634
10000 : USD 0.4485
25000 : USD 0.4485

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Packaging
Product
Brand
Operating Temperature Range
Maximum Reverse Leakage Current
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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BYC8X-600 Hyperfast rectifier diode, low switching loss Rev. 02 13 March 2009 Product data sheet 1. Product profile 1.1 General description Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits Low reverse recovery current and low Reduces switching losses in thermal resistance associated MOSFET 1.3 Applications Continuous Current Mode (CCM) Half-bridge/full-bridge switched-mode Power Factor Correction (PFC) power supplies Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 600 V RRM reverse voltage I average forward square-wave pulse = 0.5 --8 A F(AV) current T =59C see Figure 1 h see Figure 2 Dynamic characteristics t reverse recovery I =8A V =400 V -19 - ns rr F R time dI /dt = 500 A/s F T = 25 C see Figure 5 j Static characteristics V forward voltage I =8A T =150 C see - 1.4 1.85 V F F j Figure 4NXP Semiconductors BYC8X-600 Hyperfast rectifier diode, low switching loss 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8X-600 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting SOD113 hole 2-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse -600 V RRM voltage V crest working reverse -600 V RWM voltage I average forward square-wave pulse =0.5 T = 59 C see Figure -8 A F(AV) h current 1 see Figure 2 I repetitive peak forward square-wave pulse = 0.5 t = 25 s T =59C - 16 A FRM p h current I non-repetitive peak t = 10 ms sine-wave pulse T =25C - 80 A FSM p j(init) forward current t = 8.3 ms sine-wave pulse T =25C - 88 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYC8X-600 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 13 March 2009 2 of 9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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