Product Information

BYC8DX-600,127

BYC8DX-600,127 electronic component of NXP

Datasheet
NXP Semiconductors Rectifiers PWR 600 V 8 A
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2969 ea
Line Total: USD 1.3

2315 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2305 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8936
10 : USD 0.7153
100 : USD 0.5796
500 : USD 0.506
1000 : USD 0.4232
2000 : USD 0.4048
5000 : USD 0.3853
10000 : USD 0.3737
25000 : USD 0.3737

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Rohs Mouser
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYC8DX-600 Hyperfast power diode Rev.02 - 29 January 2018 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Isolated plastic package Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T = 47 C 8 A F(AV) h Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 47 C 16 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 55 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 60 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 4 - 2 2.9 V F F j I = 8 A T = 150 C Fig. 4 - 1.5 1.85 V F j Dynamic characteristics t reverse recovery time I = 8 A V = 400 V dI /dt = 500 A/s - 20 - ns rr F R F T = 25 C Fig. 5 jWeEn Semiconductors BYC8DX-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8DX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYC8DX-600 BYC8DX-600 BYC8DX-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 January 2018 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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