BYV10X-600PQ NXP

BYV10X-600P Ultrafast power diode 26 September 2018 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Isolated plastic package Low leakage current Low forward voltage drop Low thermal resistance Soft recovery characteristic 3. Applications High frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I average forward = 0.5 T 71 C square-wave - - 10 A F(AV) h current pulse Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 80 A FSM p j(init) forward current pulse Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 88 A p j(init) pulse Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.5 2 V F F j I = 10 A T = 150 C Fig. 6 - - 1.6 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 35 50 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYV10X-600P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A mb 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV10X-600P TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac BYV10X-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 10