Product Information

PCF85103C-2T/00:11

PCF85103C-2T/00:11 electronic component of NXP

Datasheet
EEPROM 256X8-BIT CMOS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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PCF85103C-2 2 256 8-bit CMOS EEPROM with I C-bus interface Rev. 04 22 October 2004 Product data 1. Description The PCF85103C-2 is a oating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier. 2 Data bytes are received and transmitted via the serial I C-bus. Up to eight 2 PCF85103C-2 devices may be connected to the I C-bus. Chip select is accomplished by three address inputs (A0, A1 and A2). 2 The PCF85103C-2 is identical to PCF85102C-2 except for the xed I C address, 2 allowing up to eight PCF85102C-2 and eight PCF85103C-2 on the same I C-bus. 2. Features Low power CMOS: 2.0 mA maximum operating current maximum standby current 10 A (at 6.0 V), typical 4 A Non-volatile storage of 2 kbits organized as 256 8-bit Single supply with full operation down to 2.5 V On-chip voltage multiplier 2 Serial input/output I C-bus Write operations: byte write mode 8-byte page write mode (minimizes total write time per byte) Read operations: sequential read random read Internal timer for writing (no external components) Internal power-on reset 0 kHz to 100 kHz clock frequency High reliability by using a redundant storage code Endurance: 1,000,000 Erase/Write (E/W) cycles at T =22 C amb 10 years non-volatile data retention time Pin compatible to: PCF8570, PCF8571, PCF8572, PCA8581, PCF8582, and PCF85102PCF85103C-2 Philips Semiconductors 2 256 8-bit CMOS EEPROM with I C-bus interface ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101 Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA Offered in DIP8 and SO8 packages. 3. Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit V supply voltage 2.5 - 6.0 V DD I supply current read f = 100 kHz DDR SCL V = 2.5 V - - 60 A DD V =6V - - 200 A DD I supply current E/W f = 100 kHz DDW SCL V = 2.5 V - - 0.6 mA DD V = 6 V - - 2.0 mA DD I standby supply current V = 2.5 V - - 3.5 A DD(stb) DD V =6V - - 10 A DD 4. Ordering information Table 2: Ordering information Type number Package Name Description Version PCF85103C-2P/00 DIP8 plastic dual in-line package 8 leads (300 mil) SOT97-1 PCF85103C-2T/00 SO8 plastic small outline package 8 leads (straight) SOT96-1 body width 3.9 mm 4.1 Ordering options Table 3: Ordering options Type number Topside mark PCF85103C-2P/00 PCF85103C2 PCF85103C-2T/00 85103C2 9397 750 14218 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 04 22 October 2004 2 of 20

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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