PHN203,518 Nexperia

PHN203 Dual N-channel TrenchMOS logic level FET Rev. 05 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency Suitable for logic level gate drive applications due to fast switching sources characteristics 1.3 Applications DC-to-DC converters Lithium-ion battery applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C; T 150C --30 V DS j j voltage [1] I drain current T = 25 C; pulsed; --6.3 A D amb see Figure 1; see Figure 3 [1] P total power T = 25 C; pulsed; --2 W tot amb dissipation see Figure 2 Static characteristics R drain-source V =10V; I =7A; T =25C; - 2430m DSon GS D j on-state see Figure 9; see Figure 10 resistance Dynamic characteristics Q gate-drain charge V =10V; I =7A; V =15V; -3 -nC GD GS D DS T =25C; see Figure 11 j [1] Single device conducting.PHN203 Nexperia Dual N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 D2 8 5 D1 D1 D2 2 G1 gate1 3S2 source2 4 G2 gate2 5D2 drain2 1 4 6D2 drain2 SOT96-1 (SO8) S1 G1 S2 G2 7D1 drain1 mbk725 8D1 drain1 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHN203 SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150C --30 V DS j j V drain-gate voltage T 150 C; T 25 C; R =20k --30 V DGR j j GS V gate-source voltage -20 - 20 V GS [1] I drain current T = 70 C; pulsed; see Figure 1 --5 A D amb [1] T = 25 C; pulsed; see Figure 1; --6.3 A amb see Figure 3 [1] I peak drain current t 10 s; pulsed; T =25C; --18 A DM p amb see Figure 3 [1] P total power dissipation T = 25 C; pulsed; see Figure 2 --2 W tot amb T storage temperature -55 - 150 C stg T junction temperature -55 - 150 C j Source-drain diode [1] I source current T = 25 C; pulsed --2 A S amb [1] I peak source current t 10 s; pulsed; T =25C --4.1 A SM p amb Avalanche ruggedness E non-repetitive V =10V; T =25C; I =8.7 A; - - 37.8 mJ DS(AL)S GS j(init) D drain-source V 30 V; unclamped; t = 0.2 ms; sup p avalanche energy R =50 GS [1] Single device conducting. PHN203 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 05 27 April 2010 2 of 13