PMCM650CUNEZ Nexperia

PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev. 1.0 8 November 2017 Product data sheet 1 Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits Common-drain type for bi-directional current flow Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications Loadswitch Battery Protection Battery Management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V source-source voltage T = 25 C - - 20 V SS j V gate-source voltage -8 - 8 V GS 1 I source current T = 25 C V = 4.5 V t 5 s - - 5.3 A S amb GS Static characteristics R source-source on-state V = 4.5 V I = 3 A T = 25 C - 40 52 m SSon GS S j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . WLCSP6Nexperia PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET 2 Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 2 S1 S2 A1 G1 gate 1 A2 S1 source 1 A B1 S2 source 2 B B2 S1 source 1 C C1 S2 source 2 G1 G2 aaa-027241 Transparent top view C2 G2 gate 2 3 Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM650CUNE WLCSP6 wafer level chip-size package 6 bumps (3 x 2) WLCSP6 3-2 4 Marking Table 4. Marking codes Type number Marking code PMCM650CUNE AH PMCM650CUNE v.1 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved. Product data sheet Rev. 1.0 8 November 2017 2 / 18