Product Information

PMDPB42UN,115

PMDPB42UN,115 electronic component of NXP

Datasheet
MOSFET 20V, Dual N-Channel Trench MOSFET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.276
9000 : USD 0.2746
24000 : USD 0.2588
48000 : USD 0.2538
N/A

Obsolete

Read More Specifications

     
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RoHS - XON
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Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
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Typical Turn-Off Delay Time
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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMDPB42UN 20 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C t 5 s --5.1 A D GS amb Static characteristics (per transistor) R drain-source on-state V =4.5 V I = 3.9 A T = 25 C - 40 50 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . DFN2020-6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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