PMDPB65UP,115

PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 2 0.65 mm 1.8 V R rated for low voltage gate DSon drive Exposed drain pad for excellent thermal conduction 1 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disk and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source T =25C ---20 V DS amb voltage V gate-source -8 - 8 V GS voltage [1] I drain current V =-4.5V; T =25C ---3.5A D GS amb Static characteristics (per transistor) R drain-source V =-4.5V; I =-1A; - 5870m DSon GS D on-state t 300 s; 0.01 ; p resistance T =25C j [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .PMDPB65UP NXP Semiconductors 20 V, 3.5 A dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source 1 6 54 2 G1 gate 1 1 6, 7 3D2 drain 2 78 4S2 source 2 5 G2 gate 2 2 5 123 6D1 drain 1 Transparent top view 7D1 drain 1 SOT1118 (HUSON6) 3, 8 4 8D2 drain 2 017aaa062 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB65UP HUSON6 plastic thermal enhanced ultra thin small outline package; SOT1118 no leads; 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB65UP 1C 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS amb V gate-source voltage -8 8 V GS [1] I drain current V =-4.5 V; T =25C --3.5 A D GS amb [1] V =-4.5 V; T =100 C --2.7 A GS amb I peak drain current T = 25 C; single pulse; t 10 s - -20 A DM amb p [2] P total power dissipation T =25C - 520 mW tot amb [1] -1.25W T =25C - 8.3 W sp PMDPB65UP All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 8 March 2011 2 of 15