Product Information

PMDPB70XP,115

PMDPB70XP,115 electronic component of Nexperia

Datasheet
MOSFET P-Chan -30V -3.8A
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5114 ea
Line Total: USD 0.51

5119 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
751 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

PMDPB70XP,115
Nexperia

5 : USD 0.3452
50 : USD 0.2789
150 : USD 0.2504
500 : USD 0.2149
3000 : USD 0.1991
6000 : USD 0.1897

5119 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMDPB70XP,115
Nexperia

1 : USD 0.5114
10 : USD 0.407
100 : USD 0.229
1000 : USD 0.1649
3000 : USD 0.1495
9000 : USD 0.1388
24000 : USD 0.1388
45000 : USD 0.1329

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC/DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---30 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---3.8 A D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-2.9A T = 25 C - 70 87 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMDPB70XP Nexperia 30 V, dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa258 Transparent top view 7D1 drain TR1 SOT1118 (HUSON6) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB70XP HUSON6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB70XP 1H PMDPB70XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 9 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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