Product Information

PMMT591A

PMMT591A electronic component of NXP

Datasheet
TRANSISTOR, PNP, SOT-23
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.1097 ea
Line Total: USD 54.85

0 - Global Stock
MOQ: 500  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 500
Multiples : 1
500 : USD 0.1097
1500 : USD 0.1038

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Hfe Min
Operating Temperature Min
Operating Temperature Range
Packaging
Power Dissipation Ptot Max
Voltage Vcbo
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET PMMT591A PNP BISS transistor Product data sheet 2004 Jan 13 Supersedes data of 2001 Jun 11 NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low collector-emitter saturation voltage ensures 1 base reduced power consumption. 2 emitter 3 collector APPLICATIONS Battery powered units where high current and low power consumption are important. handbook, halfpage DESCRIPTION 3 3 PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. 1 MARKING 2 1 2 (1) TYPE NUMBER MARKING CODE Top view MAM256 PMMT591A 9B* Note 1. * = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMMT591A plastic surface mounted package 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 40 V CBO V collector-emitter voltage open base 40 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 1 A C I peak collector current 2 A CM I peak base current 1 A BM P total power dissipation T 25 C note 1 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 13 2

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