Product Information

PMN120ENEX

PMN120ENEX electronic component of Nexperia

Datasheet
Trans MOSFET N-CH 60V 3.1mA 6-Pin TSOP T/R

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 1

Stock Image

PMN120ENEX
Nexperia

3000 : USD 0.069
6000 : USD 0.0652
12000 : USD 0.0636
18000 : USD 0.0625
24000 : USD 0.0617
30000 : USD 0.0609
300000 : USD 0.0593
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

PMN120ENEX
Nexperia

1 : USD 0.6627
10 : USD 0.501
100 : USD 0.246
500 : USD 0.169
1000 : USD 0.1349
3000 : USD 0.116
9000 : USD 0.1019
24000 : USD 0.097
45000 : USD 0.0946
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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PMN120ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 3.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 2.4 A T = 25 C - 96 123 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMN120ENE 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN120ENE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN120ENE 3K PMN120ENE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 December 2017 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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