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PMN27UN,135

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Trans MOSFET N-CH 20V 5.7A 6-Pin TSOP T/R

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.3464 ea
Line Total: USD 34.64

0 - Global Stock

MOQ: 100 Multiples: 1
Pack Size: 1

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Additional Infomation About Product

PMN27UN TrenchMOS ultra low level FET Rev. 01 27 September 2002 Product data M3D302 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PMN27UN in SOT457 (TSOP6). 2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package. 3. Applications Battery powered motor control Load switch in notebook computers High speed switch in set top box power supplies Driver FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT457 (TSOP6), simplied outline and symbol Pin Description Simplied outline Symbol 1,2,5,6 drain (d) d 6 5 4 3 gate (g) 4 source (s) g s MBB076 132 Top view MBK092 SOT457 (TSOP6)PMN27UN Philips Semiconductors TrenchMOS ultra low level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) 25 C T 150 C - 20 V DS j I drain current (DC) T =25 C; V = 4.5 V - 5.7 A D sp GS P total power dissipation T =25 C - 1.75 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 4.5 V; I = 2 A; T =25 C 2734m DSon GS D j V = 2.5 V; I = 2 A; T =25 C 3240m GS D j V = 1.8 V; I = 1.5 A; T =25 C 3956m GS D j 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 20 V DS j V gate-source voltage (DC) - 8V GS I drain current (DC) T =25 C; V = 4.5 V; Figure 2 and 3 - 5.7 A D sp GS T =70 C; V = 4.5 V; Figure 2 - 4.5 A sp GS I peak drain current T =25 C; pulsed; t 10 s; Figure 3 - 22.9 A DM sp p P total power dissipation T =25 C; Figure 1 - 1.75 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 1.45 A S sp 9397 750 10189 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 01 27 September 2002 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Id - Continuous Drain Current 5.7 A 5.7 A
Transistor Polarity N N
Pd - Power Dissipation 1.75 W 1.75 W
Mounting Style Surface Mount Surface Mount
Packaging Tape And Reel Tape And Reel
Channel Mode Enhancement Enhancement
Gate-Source Voltage Max 8 V 8 V
Drain-Source On-Res 0.034(Ohm) 0.034(Ohm)
Operating Temp Range - 55 C to 150 C - 55 C to 150 C
Package Type TSOP TSOP
Pin Count 6 6
Type Power Mosfet Power Mosfet
Number Of Elements 1 1
Operating Temperature Classification military military
Drain-Source On-Volt 20(V) 20(V)
Rad Hardened No No