Product Information

PMZB290UNE

PMZB290UNE electronic component of NXP

Datasheet
MOSFET, N-CH, 20V, 1A, SOT883B
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3919 ea
Line Total: USD 0.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.3919
10 : USD 0.3008
25 : USD 0.2516
100 : USD 0.1239
500 : USD 0.1032
1000 : USD 0.0754

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
LoadingGif

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Additional Infomation About Product

PMZB290UNE 20 V, single N-channel Trench MOSFET Rev. 3 23 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage Ultra thin package profile of 0.37mm Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C --1 A D GS amb Static characteristics R drain-source on-state V =4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BPMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view DFN1006B-3 (SOT883B) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB290UNE DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB290UNE 0000 0110 1 For DFN1006B-3 (SOT883B) binary marking code description see Figure 1. 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PMZB290UNE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 23 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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