PMZB350UPE NXP

PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 1.8 kV ESD protected 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -1.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.3 A T = 25 C - 330 450 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMZB350UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB350UPE DFN1006B-3 Leadless ultra small plastic package 3 solder lands body 1.0 x SOT883B 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB350UPE 0100 1100 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB350UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 1 August 2012 2 / 14