Product Information

PMZB350UPE

PMZB350UPE electronic component of NXP

Datasheet
MOSFET, P CH, 20V, 1.4A, DFN1006B-3
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.8543 ea
Line Total: USD 4.27

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 5
Multiples : 1
5 : USD 0.8543
25 : USD 0.4116
100 : USD 0.1896
250 : USD 0.1753
500 : USD 0.1433
1000 : USD 0.1032

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 1.8 kV ESD protected 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -1.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.3 A T = 25 C - 330 450 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMZB350UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB350UPE DFN1006B-3 Leadless ultra small plastic package 3 solder lands body 1.0 x SOT883B 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB350UPE 0100 1100 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB350UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 1 August 2012 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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