Product Information

PMZB350UPE,315

PMZB350UPE,315 electronic component of Nexperia

Datasheet
P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0537 ea
Line Total: USD 537

106700 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000

 More Buying Options & Price Grid(s)

Availability Price Quantity
3351 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

PMZB350UPE,315
Nexperia

5 : USD 0.0975
50 : USD 0.0809
150 : USD 0.0675
500 : USD 0.0639
2500 : USD 0.061
5000 : USD 0.0595

3376 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMZB350UPE,315
Nexperia

1 : USD 0.3404
10 : USD 0.23
100 : USD 0.0966
1000 : USD 0.0782
2500 : USD 0.0725
10000 : USD 0.0587
20000 : USD 0.0587
50000 : USD 0.0575
100000 : USD 0.0552

106700 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10000
Multiples : 10000

Stock Image

PMZB350UPE,315
Nexperia

10000 : USD 0.0537

17000 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 125
Multiples : 1

Stock Image

PMZB350UPE,315
Nexperia

125 : USD 0.0646
250 : USD 0.0636
500 : USD 0.0626
1000 : USD 0.0615
3000 : USD 0.0603

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 1.8 kV ESD protected 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -1.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.3 A T = 25 C - 330 450 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZB350UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB350UPE DFN1006B-3 Leadless ultra small plastic package 3 solder lands body 1.0 x SOT883B 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB350UPE 0100 1100 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB350UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 August 2012 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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