PMZB380XN NXP

PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile of 0.37mm height 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C 1 - - 930 mA D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 200 mA T = 25 C - 0.38 0.46 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMZB380XN 30 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 G 3 D drain Transparent top view S 017aaa253 DFN1006B-3 (SOT883B) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB380XN DFN1006B-3 Leadless ultra small plastic package 3 solder lands body 1.0 x SOT883B 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB380XN 0000 1001 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB380XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 1 August 2012 2 / 13