Photomicrosensor (Transmissive) EE-SX1057 Dimensions Features Compact model with a 3.6-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V 5 V ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 25C to 85C perature Storage Tstg 30C to 100C Soldering temperature Tsol 260C Internal Circuit (see note 3) K C Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. tolerances are as shown below. 2. The pulse width is 10 s maximum with a frequency of A E 100 Hz. Dimensions Tolerance 3. Complete soldering within 10 seconds. 3 mm max. 0.2 Terminal No. Name 3 < mm 6 0.24 A Anode 6 < mm 10 0.29 K Cathode 10 < mm 18 0.35 C Collector E Emitter 18 < mm 30 0.42 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.15 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 1.5 mA min., 8 mA typ., 30 mA max. I = 15 mA, V = 2 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated V (sat) 0.4 V max. I = 30 mA, I = 1 mA CE F L voltage Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ., 20 A max. V = 10 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ., 20 A max. V = 10 V, R = 100 , I = 5 mA CC L L 68 EE-SX1057 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V IF CE Ta = 30C PC Ta = 25C Ta = 70C Ambient temperature Ta (C) Forward current I (mA) F Forward voltage V (V) F Light Current vs. CollectorEmitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25C V = 10 V I = 20 mA CE F V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Response Time Measurement Response Time vs. Load Resist- (Typical) Circuit ance Characteristics (Typical) V = 5 V CC I = 20 mA Input F Ta = 25C V = 10 V CE Ta = 25C 90 % Output 10 % (Center of optical axis) Input Output Load resistance R (k ) L Distance d (mm) EE-SX1057 Photomicrosensor (Transmissive) 69 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Light current I (mA) L