Product Information

EE-SX1109

EE-SX1109 electronic component of Omron

Datasheet
Optical Switches, Transmissive, Phototransistor Output TRANSMISSIVE

Manufacturer: Omron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1

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EE-SX1109
Omron

1000 : USD 0.7722
N/A

Obsolete
0 - WHS 2


Multiples : 1000

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EE-SX1109
Omron

N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

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EE-SX1109
Omron

1 : USD 0.8097
5 : USD 0.8097
10 : USD 0.8097
25 : USD 0.8097
50 : USD 0.8097
100 : USD 0.8097
250 : USD 0.8097
500 : USD 0.7988
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

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EE-SX1109
Omron

1 : USD 1.2936
3 : USD 0.9494
34 : USD 0.8864
N/A

Obsolete
0 - WHS 5

MOQ : 15
Multiples : 1

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EE-SX1109
Omron

15 : USD 2.1651
N/A

Obsolete
0 - WHS 6

MOQ : 9
Multiples : 1

Stock Image

EE-SX1109
Omron

9 : USD 2.4678
10 : USD 1.096
25 : USD 0.9864
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Sensing Distance
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
Output Type
Termination Style
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
Vr - Reverse Voltage
LoadingGif

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Photomicrosensor (Transmissive) EE-SX1109 Be sure to read Precautions on page 25. Dimensions Features Ultra-compact with a 6-mm-wide sensor and a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Optical axis Reverse voltage V 5 V R Detector CollectorEmitter V 20 V CEO voltage EmitterCollector V 5 V ECO voltage Cross section AA Collector current I 20 mA C Recommended Internal Circuit Soldering Pattern Collector dissipa- P 75 mW C tion (see note 1) Ambient tem- Operating Topr 30C to 85C perature Storage Tstg 40C to 90C Reflow soldering Tsol 255C (see note 3) Manual soldering Tsol 350C Terminal No. Name (see note 3) A Anode Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25C. Unless otherwise specified, the C Collector 2. Duty: 1/100 Pulse width: 0.1 ms tolerances are 0.15 mm. E Emitter 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 A max. V = 5 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 50 A min., 150 A typ., I = 5 mA, V = 5 V L F CE 500 A max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 A CE F L age Peak spectral sensitivity wave- 900 nm typ. --- P length Rising time tr 10 s typ. V = 5 V, R = 1 k, CC L I = 100 A L Falling time tf 10 s typ. V = 5 V, R = 1 k, CC L I = 100 A L 70 EE-SX1109 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Dis- Forward Current vs. Forward Light Current vs. Forward Current sipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 5 V CE Ambient temperature Ta (C) Forward current I (mA) F Forward voltage V (V) F Light Current vs. CollectorEmitter Relative Light Current vs. Ambient Dark Current vs. Ambient Temper- Voltage Characteristics (Typical) Temperature Characteristics (Typical) ature Characteristics (Typical) Ta = 25C I = 5 mA F V = 5 V CE V = 10 V CE I = 10 mA F V = 2 V CE I = 5 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteris- Sensing Position Characteris- ance Characteristics (Typical) tics (Typical) tics (Typical) V = 5 V CC I = 5 mA F Ta = 25C I = 5 mA F V = 5 V CE V = 5 V CE Load resistance R (k) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1109 Photomicrosensor (Transmissive) 71 Forward current I (mA) F Light current I (A) L Response time tr, tf (s) Collector dissipation P (mW) C Forward current I (mA) F Relative light current I (%) L Relative light current I (%) L Light current I (A) L Dark current I (nA) D Relative light current I (%) L

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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OMRON STI

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