EE-SX1131 Omron

Photomicrosensor (Transmissive) EE-SX1131 Be sure to read Precautions on page 25. Dimensions Features Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.3-mm-wide aperture. Dual-channel output. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Optical axis Reverse voltage V 5 V R Detector CollectorEmitter V 20 V CEO voltage Cross section AA EmitterCollector V 5 V ECO Recommended Soldering Pattern Internal Circuit voltage Collector current I 20 mA C Collector dissipa- P 75 mW C tion (see note 1) Ambient tem- Operating Topr 30C to 85C perature Storage Tstg 40C to 90C Terminal No. Name Reflow soldering Tsol 255C A Anode (see note 3) NC Not connected. Manual soldering Tsol 350C (see note 3) K Cathode Unless otherwise specified, the C Collector tolerances are 0.15 mm. Note: 1. Refer to the temperature rating chart if the ambient temper- E1 Emitter 1 ature exceeds 25C. E2 Emitter 2 2. Duty: 1/100 Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 A max. V = 5 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I /I 50 A min., 150 A typ., I = 5 mA, V = 5 V L1 L2 F CE 500 A max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated voltage V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 A CE F L Peak spectral sensitivity wavelength 900 nm typ. --- P Rising time tr 10 s typ. V = 5 V, R = 1 k, CC L I = 100 A L Falling time tf 10 s typ. V = 5 V, R = 1 k, CC L I = 100 A L 78 EE-SX1131 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C Ta = 25C V = 5 V CE Forward current I (mA) F Ambient temperature Ta (C) Forward voltage V (V) F Dark Current vs. Ambient Tem- Light Current vs. CollectorEmitter Relative Light Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics (Typical) perature Characteristics (Typical) Ta = 25C I = 5 mA F V = 5 V CE I = 10 mA V = 10 V F CE V = 2 V CE I = 5 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resistance Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 5 mA I = 5 mA F F Ta = 25C V = 5 V V = 5 V CE CE Load resistance R (k) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1131 Photomicrosensor (Transmissive) 79 Forward current I (mA) Response time tr, tf (s) F Light current I (A) L Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (A) L