EE-SX1350

Photomicrosensor (Transmissive) EE-SX1350 Compact Slot / SMD Type (Slot width: 5 mm) Unique 5 mm Slot width. PCB surface mounting type. High resolution with a 0.5-mm-wide aperture. Be sure to read Safety Precautions on page 3. Ordering Information Photomicrosensor Sensing Connecting Aperture size (H W) Appearance Sensing distance Output type Model method method (mm) 9 Transmissive Emitter 1.4 1.4 SMT 5 mm (slot width) Phototransistor EE-SX1350 (slot type) Detector 1.4 0.5 4 9 Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Remarks Value Item Symbol Unit Condition MIN. TYP. MAX. Emitter Emitter Forward IF 30 mA --- *1 current Forward VF --- 1.2 1.5 V IF = 30 mA voltage Duty ratio: Pulse forward 1% Reverse IFP 100 mA IR --- 0.01 10 AVR = 4 V current Puls width: current 0.1 ms Peak emission P --- 940 --- nm IF = 20 mA Reverse wavelength VR 4 V --- voltage Detector Detector IF = 20 mA, Light current IL 0.4 --- 4 mA Collector- VCE = 10 V VCEO 12 V --- Emitter voltage VCE = 10 V, Dark current ID --- 10 200 nA 0 lx Emitter- Collector VECO 5 V --- Collector- voltage Emitter IF = 20 mA, VCE (sat) --- 0.1 0.4 V Collector saturated IL = 0.1 mA IC 20 mA --- current voltage Peak spectral Collector PC 50 mW --- *1 sensitivity P --- 900 --- nm VCE = 5 V dissipation wavelength Operating Topr -30 to 85 C --- *1 temperature VCC = 5 V, Rising time tr --- 11 --- s RL = 100 Storage Tstg -40 to 100 C --- *1 IL = 1 mA * temperature VCC = 5 V, Reflow soldering 10 sec. Tsol 255 C Falling time tf --- 14 --- s RL = 100 temperature max. *2 IL = 1 mA * *1. Continuous Forward Current and Collector Power Dissipation * Refer to the following timing diagram for tr and tf. must be derated complying. The product should be used without IL freezing or condensation. Input VCC Input *2. In case of reflow soldering, conditions which are shown at the 0 temperature profile should be kept. t Output 90% Output 0 10% Exterior Specifications t RL t r t f Material Connecting method Weight (g) Case SMT 0.3 PPS 1EE-SX1350 Engineering Data (Reference value) Fig 1. Forward Current vs. Collector Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 60 60 60 4 Ta = 25C VCE = 5 V PC 3.5 50 50 50 Ta =30C 3 40 40 40 Ta = 25C 2.5 IF Ta= 85C 30 30 30 2 1.5 20 20 20 1 10 10 10 0.5 0 0 0 0 010 20 30 40 50 -40 -20 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Ambient temperature Ta (C) Forward current IF (mA) Forward voltage VF (V) Fig 4. Light Current vs. Collector- Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Emitter Voltage Characteristics Temperature Characteristics (Typical) Temperature Characteristics (Typical) (Typical) 120 1000 4 IF = 20 mA VCE = 10 V VCE = 5 V 0 l x Ta = 25C 3.5 110 100 3 100 2.5 10 90 2 1.5 80 1 1 70 IF = 10 mA 0.5 IF = 5 mA 0.1 60 0 -40 -20 0 20 40 60 80 100 -30 -20 -10 0 10 20 30 40 50 60 70 8090 01234567 8 910 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-Emitter voltage VCE (V) Fig 7. Response Time vs. Load Fig 8. Sensing Position Characteristics Fig 9. Sensing Position Characteristics Resistance Characteristics (Typical) (Typical) (Typical) 10,000 120% 120% VCC = 5 V IL =1 mA Ta = 25C 100% 100% 1,000 80% 80% IF = 20 mA VCE = 5 V 100 60% Ta = 25C 60% IF = 20 mA (Center of tf VCE = 5 V optical axis) Ta = 25C 40% 40% 10 tr (Center of 20% 20% optical axis) 1 0% 0% 0.01 0.1 1 10 -1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 Load resistance RL (k) Distance d (mm) Distance d (mm) 2 IF = 20 mA IF = 30 mA IF = 40 mA IF = 50 mA Response time tr, tf (s) Light current IL (mA) Forward current IF (mA) Collector dissipation PC (mW) Relative light current IL (%) Relative light current IL (%) Forward current IF (mA) Relative light current IL (%) Dark current ID (nA) Light current IL (mA)