X-On Electronics has gained recognition as a prominent supplier of 2N6036G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6036G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6036G ON Semiconductor

2N6036G electronic component of ON Semiconductor
2N6036G ON Semiconductor
2N6036G Darlington Transistors
2N6036G  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2N6036G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 4A 80V Bipolar Power PNP
Datasheet: 2N6036G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5246
10 : USD 1.3086
100 : USD 1.0212
500 : USD 0.8436
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Obsolete
0
MOQ : 50
Multiples : 50
50 : USD 0.5394
75 : USD 0.5178
250 : USD 0.5178
1000 : USD 0.5178
3000 : USD 0.5178
N/A

Obsolete
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.3615
N/A

Obsolete
0
MOQ : 949
Multiples : 949
949 : USD 0.4434
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.2554
10 : USD 1.1371
30 : USD 1.0722
100 : USD 0.9973
500 : USD 0.8791
1000 : USD 0.8634
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.349
10 : USD 0.8843
25 : USD 0.8046
100 : USD 0.6609
500 : USD 0.5454
1000 : USD 0.4331
2000 : USD 0.4201
N/A

Obsolete
0
MOQ : 3
Multiples : 1
3 : USD 0.8685
10 : USD 0.7735
25 : USD 0.6921
28 : USD 0.5699
76 : USD 0.5427
N/A

Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 0.4145
N/A

Obsolete
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.45
N/A

Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 0.3106
1000 : USD 0.2982
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6036G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6036G and other electronic components in the Darlington Transistors category and beyond.

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2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) C B 2N6034G 40 2N6035G, 2N6038G 60 2N6036G, 2N6039G 80 CollectorCutoff Current I A CEO (V = 40 Vdc, I = 0) CE B 2N6034G 100 (V = 60 Vdc, I = 0) CE B 2N6035G, 2N6038G 100 (V = 80 Vdc, I = 0) CE B 2N6036G, 2N6039G 100 CollectorCutoff Current I A CEX (V = 40 Vdc, V = 1.5 Vdc) CE BE(off) 2N6034G 100 (V = 60 Vdc, V = 1.5 Vdc) CE BE(off) 2N6035G, 2N6038G 100 (V = 80 Vdc, V = 1.5 Vdc) CE BE(off) 2N6036G, 2N6039G 100 (V = 40 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6034G 500 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6035G, 2N6038G 500 (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 500 2N6036G, 2N6039G CollectorCutoff Current I mAdc CBO (V = 40 Vdc, I = 0) CB E 2N6034G 0.5 (V = 60 Vdc, I = 0) CB E 2N6035G, 2N6038G 0.5 (V = 80 Vdc, I = 0) CB E 2N6036G, 2N6039G 0.5 EmitterCutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 0.5 Adc, V = 3.0 Vdc) 500 C CE (I = 2.0 Adc, V = 3.0 Vdc) 750 15,000 C CE (I = 4.0 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 2.0 Adc, I = 8.0 mAdc) C B 2.0 (I = 4.0 Adc, I = 40 mAdc) C B 3.0 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 4.0 Adc, I = 40 mAdc) 4.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 Adc, V = 3.0 Vdc) 2.8 C CE DYNAMIC CHARACTERISTICS SmallSignal CurrentGain h 25 fe (I = 0.75 Adc, V = 10 Vdc, f = 1.0 MHz) C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E 2N6034G, 2N6035G, 2N6036G 200 2N6038G, 2N6039G 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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