BUX87 STMicroelectronics

BUX87 High voltage NPN power transistor Features High voltage capability (450 V V ) CEO Minimum lot-to-lot spread for reliable operation High DC current gain Applications 1 2 Flyback and forward single transistor low 3 power converters SOT-32 Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal schematic diagram switching speeds and high voltage withstand capability. Table 1. Device summary Order code Marking Package Packaging BUX87 BUX87 SOT-32 Tube April 2009 Doc ID 4508 Rev 5 1/9 www.st.com 9 Electrical ratings BUX87 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1000 V CES BE V Collector-emitter voltage (I = 0) 450 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 0.5 A C I Collector peak current (t 5ms) 1 A CM p I Base current 0.3 A B I Base peak current (t 5ms) 0.6 A BM p P Total power dissipation at T = 25 C 40 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 3.1 C/W thj-case 2/9 Doc ID 4508 Rev 5