Product Information

2N6399G

2N6399G electronic component of ON Semiconductor

Datasheet
ON Semiconductor SCRs 800V 12A

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4145 ea
Line Total: USD 1.41

1405 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
920 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

2N6399G
ON Semiconductor

1 : USD 1.4145
10 : USD 1.2535
100 : USD 1.0959
500 : USD 0.9556
1000 : USD 0.9235
2000 : USD 0.9223

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
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Height
Length
Type
Width
Cnhts
Hts Code
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Thyristors Datasheet 2N6394 Surface Mount 50 - 800V Pb Description The 2N6394 is designed primarily for half-wave AC control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions Blocking Voltage to 800 V for Greater Parameter These are PbFree Devices Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Additional Information Pin Out Resources Accessories Samples CASE 221A STYLE 4 1 2 Functional Diagram 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/11/21Thyristors Datasheet 2N6394 Surface Mount 50 - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit 2N6394 50 Peak Repetitive Off-State Voltage (Note 1) 2N6395 V , 100 DRM V (T = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6397 V 400 J RRM 2N6399 800 On-State RMS Current I 12 A T (RMS) (180 Conduction Angles T = 90C) C Peak NonRepetitive Surge Current I 100 A TSM (1/2 Cycle, Sine Wave, 60 Hz, T = 90C) J Circuit Fusing Considerations (t = 8.3 ms) I 40 As 2t Forward Peak Gate Power (Pulse Width 1.0 s, T = 90C) P 20 W C GM Forward Average Gate Power (t = 8.3 ms, T = 90C) P 0.5 W C G(AV) Forward Peak Gate Current (Pulse Width 1.0 s, T = 90C) I 2.0 A C GM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 2.0 C/W 8JC Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Indicates JEDEC Registered Data. Electrical Characteristics - OFF (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 1.0 A *Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 100C I - - 2.0 mA D DRM RRM J RRM Electrical Characteristics - ON (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Forward OnState Voltage (Note 2) (I = 24 A Peak) V 1.7 2.2 V TM TM Gate Trigger Voltage (Continuous DC), All Quadrants I 5.0 30 mA GT (Continuous dc) (V = 12 Vdc, R = 100 Ohms) D L Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 Ohms) V 0.7 1.5 V D L GT Gate NonTrigger Voltage (V = 12 Vdc, R = 100 Ohms, T = 125C) V 0.2 V D L J GD Holding Current (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) I 6.0 50 mA D H Turn-On Time (I = 12 A, I = 40 mAdc, V = Rated V ) t 1.0 2.0 s TM GT D DRM gt - - 15 (I = 12 A, I = 12 A) TM R Turn-Off Time (V = Rated V ) t s D DRM q (I = 12 A, I = 12 A, T = 125C) - - 35 TM R J Indicates JEDEC Registered Data 2. Pulse Test: Pulse Width 300 sec, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/11/21

Tariff Desc

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