2N7000RLRMG ON Semiconductor

2N7000RLRMG electronic component of ON Semiconductor
2N7000RLRMG ON Semiconductor
2N7000RLRMG MOSFETs
2N7000RLRMG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7000RLRMG MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7000RLRMG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2N7000RLRMG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 200mA N-Channel
Datasheet: 2N7000RLRMG Datasheet (PDF)
Price (USD)
2000: USD 0.0994 ea
Line Total: USD 198.8 
Availability : 0
  
QtyUnit Price
2000$ 0.0994
2000$ 0.0994
6000$ 0.0994
12000$ 0.0994
30000$ 0.0994
58000$ 0.0994

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 2000
Multiples : 1
QtyUnit Price
2000$ 0.0994
2000$ 0.0994
6000$ 0.0994
12000$ 0.0994
30000$ 0.0994
58000$ 0.0994

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7000RLRMG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7000RLRMG and other electronic components in the MOSFETs category and beyond.

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2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N Channel TO92 Features 2N7000G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V = 0, I = 10 Adc) V 60 Vdc GS D (BR)DSS Zero Gate Voltage Drain Current I DSS (V = 48 Vdc, V = 0) 1.0 Adc DS GS (V = 48 Vdc, V = 0, T = 125C) 1.0 mAdc DS GS J GateBody Leakage Current, Forward (V = 15 Vdc, V = 0) I 10 nAdc GSF DS GSSF ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (V = V , I = 1.0 mAdc) V 0.8 3.0 Vdc DS GS D GS(th) Static DrainSource OnResistance r DS(on) (V = 10 Vdc, I = 0.5 Adc) 5.0 GS D (V = 4.5 Vdc, I = 75 mAdc) 6.0 GS D DrainSource OnVoltage V Vdc DS(on) (V = 10 Vdc, I = 0.5 Adc) 2.5 GS D (V = 4.5 Vdc, I = 75 mAdc) 0.45 GS D OnState Drain Current (V = 4.5 Vdc, V = 10 Vdc) I 75 mAdc GS DS d(on) Forward Transconductance (V = 10 Vdc, I = 200 mAdc) g 100 mhos DS D fs DYNAMIC CHARACTERISTICS Input Capacitance C 60 pF iss (V = 25 V, V = 0, DS GS Output Capacitance C 25 oss f = 1.0 MHz) Reverse Transfer Capacitance C 5.0 rss SWITCHING CHARACTERISTICS (Note 1) ns TurnOn Delay Time t 10 on (V = 15 V, I = 500 mA, DD D R = 25 , R = 30 , V = 10 V) G L gen Turn Off Delay Time t 10 off 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping 2N7000G TO92 1000 Units / Bulk (Pb Free) 2N7000RLRAG TO92 2000 Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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