2N7002LT3G ON Semiconductor

2N7002LT3G electronic component of ON Semiconductor
2N7002LT3G ON Semiconductor
2N7002LT3G MOSFETs
2N7002LT3G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N7002LT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002LT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2N7002LT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 115mA N-Channel
Datasheet: 2N7002LT3G Datasheet (PDF)
Price (USD)
12049: USD 0.0216 ea
Line Total: USD 260.26 
Availability : 51701
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
12049$ 0.0216

Availability 135800
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0435
30000$ 0.0419
50000$ 0.041
100000$ 0.0408
150000$ 0.0406
250000$ 0.0404
500000$ 0.0403


Availability 51701
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 12049
Multiples : 1
QtyUnit Price
12049$ 0.0216


Availability 135800
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0512
30000$ 0.0493
50000$ 0.0483
100000$ 0.048


Availability 6363
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2722
Multiples : 1
QtyUnit Price
2722$ 0.0956
5064$ 0.0513
5090$ 0.0511


Availability 15664
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1647
Multiples : 1
QtyUnit Price
1647$ 0.1579
1660$ 0.1567
1674$ 0.1554
3000$ 0.1482
6000$ 0.147
15000$ 0.1458


Availability 164900
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0441
20000$ 0.0328


Availability 155200
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0435
20000$ 0.0323

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002LT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002LT3G and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features www.onsemi.com 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and V R MAX I MAX (BR)DSS DS(on) D PPAP Capable (2V7002L) 7.5 10 V, These Devices are PbFree, Halogen Free/BFR Free and are RoHS 60 V 115 mA 500 mA Compliant NChannel 3 MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V 60 Vdc DSS DrainGate Voltage (R = 1.0 M ) V 60 Vdc GS DGR 1 Drain Current I 115 mAdc D I 75 Continuous T = 25C (Note 1) D C I 800 DM Continuous T = 100C (Note 1) C 2 Pulsed (Note 2) GateSource Voltage MARKING V 20 Vdc 3 Continuous GS V 40 Vpk GSM DIAGRAM Nonrepetitive (t 50 s) p 1 THERMAL CHARACTERISTICS 702 M 2 Characteristic Symbol Max Unit SOT23 Total Device Dissipation FR5 Board P CASE 318 D 1 225 mW (Note 3) T = 25C STYLE 21 A 1.8 mW/C Derate above 25C 702 = Device Code R 556 C/W JA Thermal Resistance, JunctiontoAmbient M = Date Code* Total Device Dissipation P = PbFree Package D 300 mW (Note 4) Alumina Substrate, T = 25C (Note: Microdot may be in either location) A 2.4 mW/C Derate above 25C *Date Code orientation and/or position may R 417 C/W JA Thermal Resistance, JunctiontoAmbient vary depending upon manufacturing location. Junction and Storage Temperature T , T 55 to C J stg +150 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 2N7002LT1G 3,000 Tape & Reel 1. The Power Dissipation of the package may result in a lower continuous drain current. SOT23 2N7002LT3G 10,000 Tape & Reel 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (PbFree) 3. FR5 = 1.0 x 0.75 x 0.062 in. 2N7002LT7G 3,500 Tape & Reel 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 2V7002LT1G 3,000 Tape & Reel 2V7002LT3G 10,000 Tape & Reel SOT23 (PbFree) 2N7002LT1H* 3,000 Tape & Reel 2N7002LT7H* 3,500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not for new design. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2019 Rev. 10 2N7002L/D2N7002L, 2V7002L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V 60 Vdc (BR)DSS (V = 0, I = 10 Adc) GS D Zero Gate Voltage Drain Current T = 25C I 1.0 Adc J DSS (V = 0, V = 60 Vdc) T = 125C 500 GS DS J GateBody Leakage Current, Forward I 100 nAdc GSSF (V = 20 Vdc) GS GateBody Leakage Current, Reverse I 100 nAdc GSSR (V = 20 Vdc) GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.0 2.5 Vdc GS(th) (V = V , I = 250 Adc) DS GS D OnState Drain Current I 500 mA D(on) (V 2.0 V , V = 10 Vdc) DS DS(on) GS Static DrainSource OnState Voltage V Vdc DS(on) (V = 10 Vdc, I = 500 mAdc) 3.75 GS D (V = 5.0 Vdc, I = 50 mAdc) 0.375 GS D Static DrainSource OnState Resistance r Ohms DS(on) (V = 10 V, I = 500 mAdc) T = 25C 7.5 GS D C T = 125C 13.5 C (V = 5.0 Vdc, I = 50 mAdc) T = 25C 7.5 GS D C T = 125C 13.5 C Forward Transconductance g 80 mS FS (V 2.0 V , I = 200 mAdc) DS DS(on) D DYNAMIC CHARACTERISTICS Input Capacitance C 50 pF iss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Output Capacitance C 25 pF oss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Reverse Transfer Capacitance C 5.0 pF rss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 20 ns d(on) (V = 25 Vdc, I 500 mAdc, DD D R = 25 , R = 50 , V = 10 V) G L gen TurnOff Delay Time t 40 ns d(off) BODYDRAIN DIODE RATINGS Diode Forward OnVoltage V 1.5 Vdc SD (I = 115 mAdc, V = 0 V) S GS Source Current Continuous I 115 mAdc S (Body Diode) Source Current Pulsed I 800 mAdc SM Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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