Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET 2SK4065 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 75 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =75V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =50A 47 78 S DS D R (on)1 I =50A, V =10V 4.6 6.0 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =50A, V =4V 5.7 8.0 m DS D GS Input Capacitance Ciss 12200 pF Output Capacitance Coss V =20V, f=1MHz 950 pF DS Reverse Transfer Capacitance Crss 730 pF Turn-ON Delay Time t (on) 80 ns d Rise Time t 460 ns r See Fig.2 Turn-OFF Delay Time t (off) 930 ns d Fall Time t 640 ns f Total Gate Charge Qg 220 nC Gate-to-Source Charge Qgs V =35V, V =10V, I =100A 40 nC DS GS D Gate-to-Drain Miller Charge Qgd 50 nC Diode Forward Voltage V I =100A, V =0V 0.9 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =35V IN DD L 10V 0V 50 I =50A D V IN R =0.7 L D V OUT 2SK4065 PW=10s 10V D.C.1% 50 V DD 0V G 2SK4065 P.G 50 S Ordering Information Device Package Shipping memo 2SK4065-DL-1E TO-263-2L 800pcs./reel Pb Free No. A0324-2/7