Ordering number : ENA1479A ATP102 P-Channel Power MOSFET ATP102 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--20A 29 S DS D R (on)1 I =--20A, V =--10V 14 18.5 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--10A, V =--4.5V 22 31 m DS D GS Input Capacitance Ciss 1490 pF Output Capacitance Coss V =--10V, f=1MHz 360 pF DS Reverse Transfer Capacitance Crss 270 pF Turn-ON Delay Time t (on) 11 ns d Rise Time t 135 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 135 ns d Fall Time t 185 ns f Total Gate Charge Qg 34 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--40A 4.2 nC DS GS D Gate-to-Drain Miller Charge Qgd 11.5 nC Diode Forward Voltage V I =--40A, V =0V --0.99 --1.5 V SD S GS Switching Time Test Circuit V V = --15V DD IN 0V --10V I = --20A D V IN R =0.75 L D V OUT PW=10s D.C.1% G ATP102 P.G 50 S Ordering Information Device Package Shipping memo ATP102-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1479-2/7