ATP304-TL-H ON Semiconductor

Ordering number : ENA2192 ATP304 P-Channel Power MOSFET ATP304 Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =-1mA, V=0V -60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =-60V, V=0V -10 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Cutoff Voltage V(off) V =-10V, I=-1mA -1.2 -2.6V GS DS D Forward Transfer Admittance yfs V =-10V, I=-50A 100 S DS D R(on)1 I =-50A, V=-10V 5.0 6.5m Static Drain to Source On-State DS D GS Resistance R(on)2 I =-50A, V=-4.5V 6.4 8.9m DS D GS Input Capacitance Ciss 13000 pF Output Capacitance Coss V =-20V, f=1MHz 1080 pF DS Reverse Transfer Capacitance Crss 760 pF Turn-ON Delay Time t (on) 80 ns d Rise Time t 650 ns r See Fig.2 Turn-OFF Delay Time t (off) 780 ns d Fall Time t 460 ns f Total Gate Charge Qg 250 nC Gate to Source Charge Qgs V =-36V, V =-10V, I =-100A 55 nC DS GS D Gate to Drain Miller Charge Qgd 50 nC Diode Forward Voltage V I =-100A, V=0V -1.0 -1.5V SD S GS Reverse Recoverry Time t 90 ns rr See Fig.3 Reverse Recoverry Charge I =-100A, V = 0V, di/dt=--100A/s Q 245 nC S GS rr Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit D ATP304 G L S V DD Driver MOSFET No.A2192-2/6