Product Information

STI360N4F6

STI360N4F6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-channel 40 V 120 A STripFET Pwr MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 1.9982 ea
Line Total: USD 39.96

48 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 20  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 20
Multiples : 1

Stock Image

STI360N4F6
STMicroelectronics

20 : USD 1.9898
50 : USD 1.8566

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STI360N4F6, STP360N4F6 Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET F6 Power MOSFETs in IPAK and TO-220 packages Datasheet - production data Features Order codes V R max. I DS DS(on) D TAB TAB STI360N4F6 40 V 1.8 m 120 A STP360N4F6 3 Designed for automotive applications and 3 2 2 1 1 AEC-Q101 qualified Very low on-resistance IPAK TO-220 Low gate charge High avalanche ruggedness Low gate drive power loss Figure 1. Internal schematic diagram Applications Switching applications % 7 Description These devices are N-channel Power MOSFETs * developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low R in all DS(on) packages. 6 0 Y Table 1. Device summary Order codes Marking Packages Packing STI360N4F6 IPAK 360N4F6 Tube STP360N4F6 TO-220 December 2015 DocID023419 Rev 2 1/14 This is information on a product in full production. www.st.comContents STI360N4F6, STP360N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 IPAK package information . 9 4.2 TO-220 package information .11 5 Revision history . 13 2/14 DocID023419 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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