Ordering number : ENA1396A
ATP208
N-Channel Power MOSFET
ATP208
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V I =1mA, V =0V 40 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =40V, V =0V 1 A
DSS DS GS
Gate-to-Source Leakage Current I V =16V, V =0V 10 A
GSS GS DS
Cutoff Voltage V (off) V =10V, I =1mA 1.5 2.6 V
GS DS D
Forward Transfer Admittance | yfs | V =10V, I =45A 16 28 S
DS D
R (on)1 I =45A, V =10V 4.6 6.0 m
DS D GS
Static Drain-to-Source On-State Resistance
R (on)2 I =23A, V =4.5V 7 9.8 m
DS D GS
Input Capacitance
Ciss 4510 pF
Output Capacitance
Coss V =20V, f=1MHz 535 pF
DS
Reverse Transfer Capacitance
Crss 385 pF
Turn-ON Delay Time
t (on) 35 ns
d
Rise Time
t 400 ns
r
See speci ed Test Circuit.
Turn-OFF Delay Time
t (off) 280 ns
d
Fall Time
t 200 ns
f
Total Gate Charge
Qg 83 nC
Gate-to-Source Charge Qgs V =20V, V =10V, I =90A 19 nC
DS GS D
Gate-to-Drain Miller Charge
Qgd 17 nC
Diode Forward Voltage
V I =90A, V =0V 1.0 1.2 V
SD S GS
Switching Time Test Circuit
V V =20V
IN DD
10V
0V
I =45A
D
V
IN
R =0.44
L
D
V
OUT
PW=10s
D.C.1%
G
ATP208
P.G 50
S
Ordering Information
Device Package Shipping memo
ATP208-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
No. A1396-2/7