Product Information

BAS116LT3G

BAS116LT3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching 75V MED SPEED SWTCH

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2786 ea
Line Total: USD 0.28

3000 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2030 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BAS116LT3G
ON Semiconductor

1 : USD 0.2875
10 : USD 0.2012
100 : USD 0.0989
1000 : USD 0.0575
2500 : USD 0.0495
10000 : USD 0.0368
50000 : USD 0.0333
100000 : USD 0.0322

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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BAS116L Switching Diode Features Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel www.onsemi.com Use BAS116LT1G to order the 7 inch/3,000 unit reel S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 1 CATHODE ANODE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Continuous Reverse Voltage V 75 Vdc R Peak Forward Current I 200 mAdc F SOT23 (TO236) CASE 318 Peak Forward Surge Current I 500 mAdc FM(surge) STYLE 8 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board (Note 1) P 225 mW D T = 25C A Derate above 25C 1.8 mW/C JV M Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation P 300 mW D Alumina Substrate (Note 2) T = 25C A JV = Specific Device Code Derate above 25C 2.4 mW/C M = Date Code* Thermal Resistance, JunctiontoAmbient R 417 C/W JA = PbFree Package (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to C J stg +150 *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. ORDERING INFORMATION 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping BAS116LT1G SOT23 3000 / Tape & Reel SBAS116LT1G (PbFree) BAS116LT3G SOT23 10000 / Tape & NSVBAS116LT3G (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 12 BAS116LT1/DBAS116L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 Adc) V 75 Vdc BR (BR) Reverse Voltage Leakage Current (V = 75 Vdc) I 5.0 nAdc R R Reverse Voltage Leakage Current (V = 75 Vdc, T = 150C) 80 R J Forward Voltage (I = 1.0 mAdc) V 900 mV F F Forward Voltage (I = 10 mAdc) 1000 F Forward Voltage (I = 50 mAdc) 1100 F Forward Voltage (I = 150 mAdc) 1250 F Diode Capacitance (V = 0 V, f = 1.0 MHz) C 2.0 pF R D Reverse Recovery Time (I = I = 10 mAdc) (Figure 1) t 3.0 s F R rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 Output 50 INPUT I R Pulse SAMPLING V R OUTPUT PULSE Generator OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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