BAV70M3T5G

BAV70M3 Dual Switching Diode Common Cathode The BAV70M3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for switching applications and is housed in the SOT723 surface mount package. This device is ideal www.onsemi.com for lowpower surface mount applications where board space is at a premium. 70 V Features DUAL COMMON CATHODE Reduces Board Space These Devices are PbFree, Halogen Free/BFR Free and are RoHS SWITCHING DIODES Compliant 1 2 MAXIMUM RATINGS (EACH DIODE) ANODE ANODE Rating Symbol Value Unit 3 Reverse Voltage V 100 Vdc R CATHODE Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc MARKING FM(surge) DIAGRAM THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit SOT723 AL M CASE 631AA Total Device Dissipation P mW D 2 265 STYLE 3 FR5 Board (Note 1) 1 mW/C 1 T = 25C A 2.1 Derate above 25C AL = Specific Device Code Thermal Resistance, R 470 C/W M = Date Code JA JunctiontoAmbient Total Device Dissipation P 640 mW D ORDERING INFORMATION Alumina Substrate, (Note 2) T = 25C A 5.1 mW/C Derate above 25C Device Package Shipping Thermal Resistance, R 195 C/W JA BAV70M3T5G SOT723 8000/Tape & Reel JunctiontoAmbient (PbFree) Junction and Storage Temperature T , T 55 to C J stg +150 For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specifications device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2015 Publication Order Number: 1 April, 2015 Rev. 2 BAV70M3/DBAV70M3 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V 100 V (BR) (I = 100 A) (BR) Reverse Voltage Leakage Current (Note 3) I A R (V = 25 V, T = 150C) 60 R J (V = 100 V) 1.0 R (V = 70 V, T = 150C) 100 R J Diode Capacitance C 1.5 pF D (V = 0 V, f = 1.0 MHz) R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F t 6.0 ns Reverse Recovery Time R = 100 L rr (I = I = 10 mA, I = 1.0 mA) (Figure 1) F R R(REC) 3. For each individual diode while second diode is unbiased. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R V PULSE SAMPLING R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2