BC32725BU ON Semiconductor

BC32725BU electronic component of ON Semiconductor
BC32725BU ON Semiconductor
BC32725BU Bipolar Transistors - BJT
BC32725BU  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC32725BU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC32725BU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC32725BU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 45V; 0.8A; 625mW; TO92
Datasheet: BC32725BU Datasheet (PDF)
Price (USD)
527: USD 0.128 ea
Line Total: USD 67.46 
Availability - 48500
  
Ship by Wed. 30 Jul to Tue. 05 Aug
QtyUnit Price
527$ 0.128
2500$ 0.0818
7500$ 0.0723
30000$ 0.0536
50000$ 0.0534
100000$ 0.0531
150000$ 0.0529
250000$ 0.0525

Availability 48500
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 527
Multiples : 500
QtyUnit Price
527$ 0.128
2500$ 0.0818
7500$ 0.0723
30000$ 0.0536
50000$ 0.0534
100000$ 0.0531
150000$ 0.0529
250000$ 0.0525


Availability 5044
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 853
Multiples : 1
QtyUnit Price
853$ 0.305
1179$ 0.2206
1916$ 0.1357
2454$ 0.106
2990$ 0.0869
3408$ 0.0763
10000$ 0.0636
30000$ 0.055


Availability 4112
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.406
5$ 0.3276
10$ 0.2786
50$ 0.1806
100$ 0.1512


Availability 48500
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 2000
Multiples : 500
QtyUnit Price
2000$ 0.145
3000$ 0.1
7500$ 0.085
30000$ 0.0631
50000$ 0.0627


Availability 5044
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 1916
Multiples : 1
QtyUnit Price
1916$ 0.1357
2454$ 0.106
2990$ 0.0869
3408$ 0.0763
10000$ 0.0636
30000$ 0.055


Availability 8877
Ship by Wed. 30 Jul to Tue. 05 Aug
MOQ : 1878
Multiples : 1
QtyUnit Price
1878$ 0.1385
2407$ 0.108
2933$ 0.0886
3339$ 0.0779
10000$ 0.0649
30000$ 0.0561

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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We are delighted to provide the BC32725BU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC32725BU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon BC327, BC327 16, BC32725, BC32740 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mA, I = 0) 45 C B Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 100 A, I = 0) 50 C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 V, I = 0) 100 CB E Collector Cutoff Current I nAdc CES (V = 45 V, V = 0) 100 CE BE Emitter Cutoff Current I 100 nAdc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC327 100 630 C CE BC327 16 100 250 BC327 25 160 400 BC327 40 250 630 (I = 300 mA, V = 1.0 V) 40 C CE BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 300 mA, V = 1.0 V) C CE Collector Emitter Saturation Voltage V 0.7 Vdc CE(sat) (I = 500 mA, I = 50 mA) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 11 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E Current Gain Bandwidth Product f 260 MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) C CE 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 (t) = (t) JC JC = 100C/W MAX 0.05 JC 0.1 P (pk) (t) = r(t) 0.02 JA JA 0.07 = 375C/W MAX SINGLE PULSE JA 0.05 t 1 D CURVES APPLY FOR 0.01 POWER 0.03 t SINGLE PULSE 2 PULSE TRAIN SHOWN DUTY CYCLE, D = t /t 0.02 1 2 READ TIME AT t 1 T T = P (t) J(pk) C (pk) JC 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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