BC32725BU ON Semiconductor

BC32725BU electronic component of ON Semiconductor
BC32725BU ON Semiconductor
BC32725BU Bipolar Transistors - BJT
BC32725BU  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC32725BU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC32725BU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC32725BU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 45V; 0.8A; 625mW; TO92
Datasheet: BC32725BU Datasheet (PDF)
Price (USD)
10000: USD 0.0512 ea
Line Total: USD 512 
Availability : 9700
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
10000$ 0.0512

Availability 48500
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 598
Multiples : 500
QtyUnit Price
598$ 0.1128
2500$ 0.0818
7500$ 0.0723
30000$ 0.0574
50000$ 0.0563
100000$ 0.056
150000$ 0.0558
250000$ 0.0554


Availability 3502
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.406
5$ 0.3248
10$ 0.2772
50$ 0.1792
100$ 0.1498


Availability 4987
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1844
Multiples : 1
QtyUnit Price
1844$ 0.1411
2482$ 0.1048
2802$ 0.0928
3116$ 0.0835
5000$ 0.0735
10000$ 0.0588
50000$ 0.0566


Availability 17900
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1815
Multiples : 1
QtyUnit Price
1815$ 0.1433
2443$ 0.1065
2759$ 0.0942
3068$ 0.0847
5000$ 0.0746
10000$ 0.0596
50000$ 0.0576


Availability 48500
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 2500
Multiples : 500
QtyUnit Price
2500$ 0.1279
3000$ 0.1
7500$ 0.085
30000$ 0.0675
50000$ 0.0661


Availability 9700
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0512

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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We are delighted to provide the BC32725BU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC32725BU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon BC327, BC327 16, BC32725, BC32740 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mA, I = 0) 45 C B Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 100 A, I = 0) 50 C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 V, I = 0) 100 CB E Collector Cutoff Current I nAdc CES (V = 45 V, V = 0) 100 CE BE Emitter Cutoff Current I 100 nAdc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC327 100 630 C CE BC327 16 100 250 BC327 25 160 400 BC327 40 250 630 (I = 300 mA, V = 1.0 V) 40 C CE BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 300 mA, V = 1.0 V) C CE Collector Emitter Saturation Voltage V 0.7 Vdc CE(sat) (I = 500 mA, I = 50 mA) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 11 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E Current Gain Bandwidth Product f 260 MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) C CE 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 (t) = (t) JC JC = 100C/W MAX 0.05 JC 0.1 P (pk) (t) = r(t) 0.02 JA JA 0.07 = 375C/W MAX SINGLE PULSE JA 0.05 t 1 D CURVES APPLY FOR 0.01 POWER 0.03 t SINGLE PULSE 2 PULSE TRAIN SHOWN DUTY CYCLE, D = t /t 0.02 1 2 READ TIME AT t 1 T T = P (t) J(pk) C (pk) JC 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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