BC547BTA ON Semiconductor

BC547BTA electronic component of ON Semiconductor
BC547BTA ON Semiconductor
BC547BTA Bipolar Transistors - BJT
BC547BTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC547BTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC547BTA Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC547BTA
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 500 mW Through Hole TO-92-3
Datasheet: BC547BTA Datasheet (PDF)
Price (USD)
2000: USD 0.0663 ea
Line Total: USD 132.6 
Availability - 23280
  
Ship by Tue. 29 Jul to Mon. 04 Aug
QtyUnit Price
2000$ 0.0663
6000$ 0.06
10000$ 0.0478
26000$ 0.0475
50000$ 0.0451
100000$ 0.0418
150000$ 0.0403
250000$ 0.0387

Availability 23280
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 2000
Multiples : 2000
QtyUnit Price
2000$ 0.0663
6000$ 0.06
10000$ 0.0478
26000$ 0.0475
50000$ 0.0451
100000$ 0.0418
150000$ 0.0403
250000$ 0.0387


Availability 1186
Ship by Fri. 25 Jul to Tue. 29 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.364
10$ 0.252
25$ 0.2044
100$ 0.1442
250$ 0.1162


Availability 1188
Ship by Tue. 05 Aug to Fri. 08 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1576
50$ 0.1274
150$ 0.1122
500$ 0.068
2000$ 0.0571
4000$ 0.0541


Availability 13580
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 4000
Multiples : 2000
QtyUnit Price
4000$ 0.0694
6000$ 0.0649
6000$ 0.0476
10000$ 0.0416


Availability 22402
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 2084
Multiples : 1
QtyUnit Price
2084$ 0.1248
3092$ 0.0841
3317$ 0.0784
4000$ 0.0672
16000$ 0.0478


Availability 23280
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 6000
Multiples : 2000
QtyUnit Price
6000$ 0.0577
6000$ 0.0566
10000$ 0.0526
26000$ 0.052
50000$ 0.0503


Availability 10314
Ship by Tue. 29 Jul to Mon. 04 Aug
MOQ : 8475
Multiples : 1
QtyUnit Price
8475$ 0.0554
10000$ 0.0493
100000$ 0.0413

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
Category
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We are delighted to provide the BC547BTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC547BTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor TO92 BC546 / BC547 / BC548 / CASE 135AN BC549 / BC550 1 2 3 Features Switching and Amplifier HighVoltage: BC546, V = 65 V CEO TO92 LowNoise: BC549, BC550 CASE 135AR Complement to BC556, BC557, BC558, BC559, and BC560 1 2 These are PbFree Devices 3 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM Parameter Symbol Value Unit CollectorBase Voltage V V CBO BC546 80 ABC BC547 / BC550 50 5xyz BC548 / BC549 30 YWW CollectorEmitter Voltage V V CEO BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC5xyz = Device Code EmitterBase Voltage V V EBO x = 4 or 5 BC546 / BC547 6 y = 6, 7, 8, 9 or 0 BC548 / BC549 / BC550 5 z = A, B, C Collector Current (DC) I 100 mA A = Assembly Location C Y = Year Collector Power Dissipation P 500 mW C WW = Work Week Junction Temperature T 150 C J Storage Temperature Range T 65 to +150 C STG ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 4 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: August, 2021 Rev. 4 BC550/DBC546 / BC547 / BC548 / BC549 / BC550 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cutoff Current V = 30 V, I = 0 15 nA CBO CB E h DC Current Gain V = 5 V, I = 2 mA 110 800 FE CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 0.5 mA 90 250 mV CE C B I = 100 mA, I = 5 mA 250 600 C B V (sat) BaseEmitter Saturation Voltage I = 10 mA, I = 0.5 mA 700 mV BE C B I = 100 mA, I = 5 mA 900 C B V (on) BaseEmitter On Voltage V = 5 V, I = 2 mA 580 660 700 mV BE CE C V = 5 V, I = 10 mA 720 CE C f Current Gain Bandwidth Product V = 5 V, I = 10 mA, 300 MHz T CE C f = 100 MHz C Output Capacitance V = 10 V, I = 0, f = 1 MHz 3.5 6.0 pF ob CB E C Input Capacitance V = 0.5 V, I = 0, f = 1 MHz 9 pF ib EB C NF Noise Figure BC546 / BC547 / BC548 V = 5 V, I = 200 A, 2.0 10.0 dB CE C f = 1 kHz, R = 2 k G BC549 / BC550 1.2 4.0 BC549 V = 5 V, I = 200 A, 1.4 4.0 CE C R = 2 k , f = 30 to 15000 MHz G BC550 1.4 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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