NPN Silicon Epitaxial Transistor BCP68T1G This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT223 package, which is designed for medium power surface www.onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT223 Package Can Be Soldered Using Wave or Reflow SURFACE MOUNT SOT223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. COLLECTOR 2,4 The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die BASE The PNP Complement is BCP69T1 1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and EMITTER 3 PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 Compliant 1 2 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) C SOT223 CASE 318E Rating Symbol Value Unit STYLE 1 CollectorEmitter Voltage V 20 Vdc CEO MARKING DIAGRAM CollectorBase Voltage V 25 Vdc CBO EmitterBase Voltage V 5.0 Vdc EBO Collector Current I 1.0 Adc C AYW CA Collector Current Peak (Note 2) I 3.0 Adc CM Base Current Continuous I 0.4 Adc B Base Current Peak I 0.4 Adc BM CA = Specific Device Code A = Assembly Location Total Power Dissipation P D T = 25C (Note 1) 1.5 W Y = Year A Derate above 25C 12 mW/C W = Work Week = PbFree Package Operating and Storage Temperature T , T 65 to 150 C J stg Range (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. Device Package Shipping x 0.059 in. mounting pad for the collector lead min. 0.93 sq. in. 2. Reference SOA curve for IC peak. BCP68T1G SOT223 1,000/Tape & Reel (PbFree) THERMAL CHARACTERISTICS SBCP68T1G*, SOT223 1,000/Tape & Reel Characteristic Symbol Max Unit NSVBCP68T1G* (PbFree) Thermal Resistance, JunctiontoAmbient R 83.3 C/W BCP68T3G SOT223 4,000/Tape & Reel JA (Surface Mounted) (PbFree) For information on tape and reel specifications, Lead Temperature for Soldering, T 260 C L including part orientation and tape sizes, please 0.0625 in from case refer to our Tape and Reel Packaging Specifications Time in Solder Bath 10 Sec Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2020 Rev. 10 BCP68T1/DBCP68T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CES (I = 100 Adc, I = 0) 25 C E CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 20 C B EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I Adc CBO (V = 25 Vdc, I = 0) 10 CB E EmitterBase Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 5.0 mAdc, V = 10 Vdc) 50 C CE (I = 500 mAdc, V = 1.0 Vdc) 85 375 C CE (I = 1.0 Adc, V = 1.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 100 mAdc) 0.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 1.0 Vdc) 1.0 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc) 60 C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 15 pF CB E obo Output Capacitance (V = 5 Vdc, I = 0, f = 1.0 MHz) C 145 pF EB E ibo Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL ELECTRICAL CHARACTERISTICS 300 200 300 T = 125C J 200 = 25C 100 100 = - 55C 70 V = 10 V CE T = 25C J 50 f = 30 MHz V = 1.0 V CE 10 30 1.0 10 100 1000 10 100 200 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. DC Current Gain Figure 2. Current-Gain-Bandwidth Product www.onsemi.com 2 h , DC CURRENT GAIN FE f , CURRENTGAINBANDWIDTH PRODUCT (MHz) T