BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
www.onsemi.com
Designed for use in general purpose amplifier and switching
applications.
POWER TRANSISTORS
Features
COMPLEMENTARY
High Current Gain Bandwidth Product
SILICON
Compact TO220 AB Package
3 AMP
Epoxy Meets UL94 V0 @ 0.125 in
80100 VOLTS
These Devices are PbFree and are RoHS Compliant*
40 WATTS
MAXIMUM RATINGS
COMPLEMENTARY
BD241C
COLLECTOR 2,4
Rating Symbol BD242B BD242C Unit COLLECTOR 2,4
CollectorEmitter Voltage V 80 100 Vdc
CEO
CollectorEmitter Voltage V 90 115 Vdc
CES
1 1
BASE BASE
EmitterBase Voltage V 5.0 Vdc
EB
Collector Current Continuous I 3.0 Adc
C
EMITTER 3 EMITTER 3
Collector Current Peak I 5.0 Adc
CM
Base Current I 1.0 Adc
B MARKING
4
DIAGRAM
Total Device Dissipation P
D
@ T = 25C
40 W
C
Derate above 25C
0.32 W/C
TO220
Operating and Storage T , T 65 to +150 C
J stg
Junction Temperature Range CASE 221A
AYWW
STYLE 1
BD24xxG
ESD Human Body Model HBM 3B V
ESD Machine Model MM C V 1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
BD24xx = Device Code
assumed, damage may occur and reliability may be affected.
xx = 1C, 2B, or 2C
A = Assembly Location
THERMAL CHARACTERISTICS
Y = Year
Characteristic Symbol Max Unit
WW = Work Week
G = PbFree Package
Thermal Resistance, JunctiontoAmbient R 62.5 C/W
JA
Thermal Resistance, JunctiontoCase R 3.125 C/W
JC
ORDERING INFORMATION
Device Package Shipping
BD241CG TO220 50 Units/Rail
(PbFree)
BD242BG TO220 50 Units/Rail
(PbFree)
BD242CG TO220 50 Units/Rail
(PbFree)
For information on tape and reel specifications,
*For additional information on our PbFree strategy and soldering details, please
including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques
refer to our Tape and Reel Packaging Specification
Reference Manual, SOLDERRM/D.
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2014
1 Publication Order Number:
November, 2014 Rev. 10 BD241C/DBD241C (NPN), BD242B (PNP), BD242C (PNP)
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1) V Vdc
CEO
(I = 30 mAdc, I = 0) BD242B 80
C B
BD241C, BD242C 100
Collector Cutoff Current I mAdc
CEO
(V = 50 Vdc, I = 0) BD242B 0.3
CE B
(V = 60 Vdc, I = 0) BD241C, BD242C
CE B
Collector Cutoff Current I Adc
CES
(V = 80 Vdc, V = 0) BD242B 200
CE EB
(V = 100 Vdc, V = 0) BD241C, BD242C
CE EB
Emitter Cutoff Current I mAdc
EBO
(V = 5.0 Vdc, I = 0) 1.0
BE C
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 1.0 Adc, V = 4.0 Vdc)
C CE 25
(I = 3.0 Adc, V = 4.0 Vdc)
C CE
10
CollectorEmitter Saturation Voltage V Vdc
CE(sat)
(I = 3.0 Adc, I = 0.6 Adc) 1.2
C B
BaseEmitter On Voltage V Vdc
BE(on)
(I = 3.0 Adc, V = 4.0 Vdc) 1.8
C CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 2) f MHz
T
(I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0
C CE test
SmallSignal Current Gain h
fe
(I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) 20
C CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. f = |h | f .
T fe test
40
30
20
10
0
0 20 40 60 80 100 120 140 160
T , CASE TEMPERATURE (C)
C
Figure 1. Power Derating
www.onsemi.com
2
P , POWER DISSIPATION (WATTS)
D