Product Information

BD678G

BD678G electronic component of ON Semiconductor

Datasheet
Darlington Transistors 4A 60V Bipolar Power PNP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

BD678G
ON Semiconductor

1 : USD 0.1557
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000

Stock Image

BD678G
ON Semiconductor

1000 : USD 0.3731
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

BD678G
ON Semiconductor

1 : USD 0.8254
10 : USD 0.7323
100 : USD 0.4633
500 : USD 0.39
1000 : USD 0.3349
2000 : USD 0.3056
6000 : USD 0.2892
10000 : USD 0.2821
N/A

Obsolete
0 - WHS 4

MOQ : 5
Multiples : 500

Stock Image

BD678G
ON Semiconductor

5 : USD 0.3883
25 : USD 0.3314
45 : USD 0.3003
100 : USD 0.29
500 : USD 0.2693
N/A

Obsolete
0 - WHS 5

MOQ : 116
Multiples : 1

Stock Image

BD678G
ON Semiconductor

116 : USD 0.1557
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD676G, BD676AG 45 BD678G, BD678AG 60 BD680G, BD680AG 80 BD682G, BD682TG 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV . I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain (Note 1) h FE (I = 1.5 Adc, V = 3.0 Vdc) C CE BD676G, BD678G, BD680G, BD682G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD676AG, BD678AG, BD680AG 750 CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 1.5 Adc, I = 30 mAdc) C B BD678G, BD680G, BD682G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD676AG, BD678AG, BD680AG 2.8 BaseEmitter On Voltage (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD678G, BD680G, BD682G 2.5 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD676AG, BD678AG, BD680AG 2.5 DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMAL LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD676, 676A 10 BD678, 678A T = 25C C 0.1 BD680, 680A 5.0 BD682 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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