Product Information

BD679G

BD679G electronic component of ON Semiconductor

Datasheet
Darlington Transistors 4A 80V Bipolar Power NPN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0047 ea
Line Total: USD 2

6 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BD679G
ON Semiconductor

1 : USD 1.9398
10 : USD 1.6537
30 : USD 1.4966
100 : USD 1.3193
500 : USD 1.1824
1000 : USD 1.1482

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD675G, BD675AG 45 BD677G, BD677AG 60 BD679G, BD679AG 80 BD681G 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV , I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Currert Gain, (Note 1) h FE (I = 1.5 Adc,V = 3.0 Vdc) C CE BD675G, BD677G, BD679G, BD681G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD675AG, BD677AG, BD679AG 750 CollectorEmitter Saturation Voltage, (Note 1) (I = 1.5 Adc, I = 30 mAdc) V Vdc C B CE(sat) BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD675AG, BD677AG, BD679AG 2.8 BaseEmitter On Voltage, (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, V = 3 0 Vdc) C CE BD675AG, BD677AG, BD679AG 2.5 DYNAMIC CHARACTERISTICS Small Signal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMALLY LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD675, 675A 10 BD677, 677A T = 25C C 0.1 BD679, 679A 5.0 BD681 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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