Product Information

BD680G

BD680G electronic component of ON Semiconductor

Datasheet
Transistors Darlington 4A 80V Bipolar Power PNP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

BD680G
ON Semiconductor

1 : USD 0.5039
10 : USD 0.4264
100 : USD 0.4178
500 : USD 0.4178
1000 : USD 0.4178
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

BD680G
ON Semiconductor

1 : USD 0.5721
10 : USD 0.4578
100 : USD 0.4486
500 : USD 0.4486
1000 : USD 0.4313
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

BD680G
ON Semiconductor

1 : USD 2.0088
10 : USD 0.9931
25 : USD 0.6849
100 : USD 0.577
500 : USD 0.4829
1000 : USD 0.3964
2500 : USD 0.3868
N/A

Obsolete
0 - WHS 4

MOQ : 19
Multiples : 1

Stock Image

BD680G
ON Semiconductor

19 : USD 0.4428
100 : USD 0.4178
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD676G, BD676AG 45 BD678G, BD678AG 60 BD680G, BD680AG 80 BD682G, BD682TG 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV . I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain (Note 1) h FE (I = 1.5 Adc, V = 3.0 Vdc) C CE BD676G, BD678G, BD680G, BD682G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD676AG, BD678AG, BD680AG 750 CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 1.5 Adc, I = 30 mAdc) C B BD678G, BD680G, BD682G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD676AG, BD678AG, BD680AG 2.8 BaseEmitter On Voltage (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD678G, BD680G, BD682G 2.5 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD676AG, BD678AG, BD680AG 2.5 DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMAL LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD676, 676A 10 BD678, 678A T = 25C C 0.1 BD680, 680A 5.0 BD682 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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