BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect
High density cell design for low R .
DS(ON)
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been Voltage controlled small signal switch.
designed to minimize on-state resistance while provide
Rugged and reliable.
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
High saturation current capability.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
BS170 MMBF170
D
S
D TO-92 SOT-23
G G
S
Absolute Maximum Ratings T = 25C unless otherwise noted
A
Symbol Parameter BS170 MMBF170 Units
V Drain-Source Voltage 60 V
DSS
V Drain-Gate Voltage (R 1M)60 V
DGR GS
V Gate-Source Voltage 20 V
GSS
I Drain Current - Continuous 500 500
D
mA
- Pulsed 1200 800
T , T Operating and Storage Temperature Range - 55 to 150 C
J STG
T 300 C
L Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Characteristics T = 25C unless otherwise noted
A
Symbol Parameter BS170 MMBF170 Units
P Maximum Power Dissipation 830 300 mW
D
Derate above 25C 6.6 2.4 mW/C
R Thermal Resistance, Junction to Ambient 150 417 C/W
JA
2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E2 1 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics T =25C unless otherwise noted
A
Symbol Parameter Conditions Type Min. Typ. Max. Units
OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0V, I = 100AAll 60 V
DSS GS D
I Zero Gate Voltage Drain Current V = 25V, V = 0V All 0.5 A
DSS DS GS
I Gate - Body Leakage, Forward V = 15V, V = 0V All 10 nA
GSSF GS DS
ON CHARACTERISTICS (Notes 1)
V Gate Threshold Voltage V = V , I = 1mA All 0.8 2.1 3 V
GS(th) DS GS D
R Static Drain-Source On-Resistance V = 10V, I = 200mA All 1.2 5
DS(ON) GS D
g Forward Transconductance V = 10V, I = 200mA BS170 320 mS
FS DS D
V 2 V , MMBF170 320
DS DS(on)
I = 200mA
D
Dynamic Characteristics
C Input Capacitance V = 10V, V = 0V, All 24 40 pF
iss DS GS
f = 1.0MHz
C Output Capacitance All 17 30 pF
oss
C Reverse Transfer Capacitance All 7 10 pF
rss
Switching Characteristics (Notes 1)
t Turn-On Time V = 25V, I = 200mA, BS170 10 ns
on DD D
V = 10V, R = 25
GS GEN
V = 25V, I = 500mA, MMBF170 10
DD D
V = 10V, R = 50
GS GEN
t Turn-Off Time V = 25V, I = 200mA, BS170 10 ns
off DD D
V = 10V, R = 25
GS GEN
V = 25V, I = 500mA, MMBF170 10
DD D
V = 10V, R = 50
GS GEN
Note:
1. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%.
Ordering Information
Part Number Package Package Type Lead Frame Pin array
BS170 TO-92 BULK STRAIGHT D G S
BS170_D26Z TO-92 Tape and Reel FORMING D G S
BS170_D27Z TO-92 Tape and Reel FORMING D G S
BS170_D74Z TO-92 AMMO FORMING D G S
BS170_D75Z TO-92 AMMO FORMING D G S
MMBF170 SOT-23 Tape and Reel
2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E2 2