DATA SHEET www.onsemi.com BS170 Field Effect Transistor - N-Channel, Enhancement Mode D S G BS170, MMBF170 TO92 3 4.825x4.76 CASE 135AN General Description These NChannel enhancement mode field effect transistors are produced using onsemis proprietary, high cell density, DMOS technology. These products have been designed to minimize onstate resistance while provide rugged, reliable, and fast switching D performance. They can be used in most applications requiring up to S G 500 mA DC. These products are particularly suited for low voltage, TO92 3 4.83x4.76 LEADFORMED low current applications such as small servo motor control, power CASE 135AR MOSFET gate drivers, and other switching applications. MMBF170 Features High Density Cell Design for Low R DS(ON) D Voltage Controlled Small Signal Switch Rugged and Reliable G S High Saturation Current Capability SOT23 These are PbFree Devices CASE 31808 Drain Gate Source MARKING DIAGRAM BS170 ALYW 6ZM 1 BS170, 6Z = Device Code A = Assembly Plant Code L = Wafer Lot Number YW = Assembly Start Week M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: December, 2021 Rev. 6 MMBF170/DBS170, MMBF170 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter BS170 MMBF170 Unit V DrainSource Voltage 60 V DSS V DrainGate Voltage (R 1 M ) 60 V DGR GS V GateSource Voltage 20 V GSS I Drain Current Continuous 500 500 mA D Pulsed 1200 800 T , T Operating and Storage Temperature Range 55 to 150 C J STG T Maximum Lead Temperature for Soldering Purposes, 1/16 from Case 300 C L for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter BS170 MMBF170 Unit P Maximum Power Dissipation 830 300 mW D Derate above 25C 6.6 2.4 mW/C Thermal Resistance, Junction to Ambient 150 417 C/W R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Condition Type Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 100 A All 60 V DSS GS D I Zero Gate Voltage Drain Current V = 25 V, V = 0 V All 0.5 A DSS DS GS I Gate Body Leakage, Forward V = 15 V, V = 0 V All 10 nA GSSF GS DS ON CHARACTERISTICS (Note 1) V Gate Threshold Voltage V = V , I = 1 mA All 0.8 2.1 3 V GS(th) DS GS D R Static DrainSource OnResistance V = 10 V, I = 200 mA All 1.2 5 DS(ON) GS D g Forward Transconductance V = 10 V, I = 200 mA BS170 320 mS FS DS D V 2 V , I = 200 mA MMBF170 320 DS DS(on) D DYNAMIC CHARACTERISTICS C Input Capacitance V = 10 V, V = 0 V, All 24 40 pF iss DS GS f = 1.0 MHz C Output Capacitance All 17 30 pF oss C Reverse Transfer Capacitance All 7 10 pF rss SWITCHING CHARACTERISTICS (Note 1) t TurnOn Time V = 25 V, I = 200 mA, BS170 10 ns on DD D V = 10 V, R = 25 GS GEN V = 25 V, I = 500 mA, MMBF170 10 DD D V = 10 V, R = 50 GS GEN t TurnOff Time V = 25 V, I = 200 mA, BS170 10 ns off DD D V = 10 V, R = 25 GS GEN V = 25 V, I = 500 mA, MMBF170 10 DD D V = 10 V, R = 50 GS GEN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2