Product Information

BS170RLRAG

BS170RLRAG electronic component of ON Semiconductor

Datasheet
MOSFET 60V 500mA N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1406 ea
Line Total: USD 0.14

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BS170RLRAG
ON Semiconductor

1 : USD 0.1406
10 : USD 0.1308
100 : USD 0.1081
1000 : USD 0.0953

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BS170RLRAG
ON Semiconductor

1 : USD 0.1369
5 : USD 0.1357
50 : USD 0.1287
500 : USD 0.1125

0 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 50
Multiples : 1

Stock Image

BS170RLRAG
ON Semiconductor

50 : USD 0.3341
100 : USD 0.2005
250 : USD 0.1871

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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BS170G Small Signal MOSFET 500 mA, 60 Volts N Channel TO92 (TO226) Features BS170G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Reverse Current I 0.01 10 nAdc GSS (V = 15 Vdc, V = 0) GS DS DrainSource Breakdown Voltage V 60 90 Vdc (BR)DSS (V = 0, I = 100 Adc) GS D ON CHARACTERISTICS (Note 1) Gate Threshold Voltage V 0.8 2.0 3.0 Vdc GS(Th) (V = V , I = 1.0 mAdc) DS GS D Static DrainSource On Resistance r 1.8 5.0 DS(on) (V = 10 Vdc, I = 200 mAdc) GS D Drain Cutoff Current I 0.5 A D(off) (V = 25 Vdc, V = 0 Vdc) DS GS Forward Transconductance g 200 mmhos fs (V = 10 Vdc, I = 250 mAdc) DS D SMALLSIGNAL CHARACTERISTICS Input Capacitance C 60 pF iss (V = 10 Vdc, V = 0, f = 1.0 MHz) DS GS SWITCHING CHARACTERISTICS TurnOn Time t 4.0 10 ns on (I = 0.2 Adc) See Figure 1 D Turn Off Time t 4.0 10 ns off (I = 0.2 Adc) See Figure 1 D 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping BS170G TO92 (TO226) 1000 Unit/Tube (Pb Free) BS170RLRAG TO92 (TO226) 2000 Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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