CPH3360 Power MOSFET 30V, 303m , 1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge www.onsemi.com driving or low on resistance requirements. Features High Speed Switching V R (on) Max I Max DSS DS D 4V drive 303m 10V Pb-Free, Halogen Free and RoHS compliance 30V 532m 4.5V 1.6A 617m 4V Typical Applications DC/DC Converter ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) 3 Parameter SymbolValue Unit Drain to Source Voltage V 30 V DSS Gate to Source Voltage V 20 V GSS Drain Current (DC) I 1.6 A D 1 Drain Current (Pulse) 1:Gate I 6.4 A DP 2:Source PW 10s, duty cycle 1% 3:Drain Power Dissipation 2 When mounted on ceramic substrate P 0.9 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C PACKING TYPE : TL MARKING Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to ESD immunity<200V*, so please take care when TL handling. *Machine Model ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping Parameter SymbolValue Unit information on page 5 of this data sheet. Junction to Ambient R 138.8 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 CPH3360/D WS LOTNo.CPH3360 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V =0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =0.8A 1.3 S FS DS D R (on)1 I =0.8A, V =10V 233 303m DS D GS Static Drain to Source On-State 380 532 R (on)2 I =0.4A, V =4.5V m DS D GS Resistance R (on)3 I =0.4A, V =4V 441 617 m DS D GS Input Capacitance Ciss 82 pF Output Capacitance Coss 22 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time t (on) 4.0 ns d Rise Time t 3.3 ns r See specified Test Circuit Turn-OFF Delay Time 12 ns t (off) d Fall Time 5.4 ns t f Total Gate Charge Qg 2.2 nC Gate to Source Charge Qgs 0.36 nC V =15V, V =10V, I =1.6A DS GS D Gate to Drain Miller Charge Qgd 0.49 nC Forward Diode Voltage V SD I =1.6A, V=0V 0.9 1.5 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--15V IN DD 0V --10V I =--0.8A D V IN R =18.75 L D V OUT PW=10s D.C.1% G CPH3360 P.G 50 S www.onsemi.com 2