X-On Electronics has gained recognition as a prominent supplier of CPH5524-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CPH5524-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CPH5524-TL-E ON Semiconductor

CPH5524-TL-E electronic component of ON Semiconductor
CPH5524-TL-E ON Semiconductor
CPH5524-TL-E Bipolar Transistors - BJT
CPH5524-TL-E  Semiconductors

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See Product Specifications
Part No. CPH5524-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER
Datasheet: CPH5524-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7643 ea
Line Total: USD 0.76 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2164
6000 : USD 0.2109

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 6000
Multiples : 6000
6000 : USD 0.2194

0
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 1
Multiples : 1
1 : USD 1.1087
10 : USD 0.9005
30 : USD 0.6817
100 : USD 0.5341
500 : USD 0.4856
1000 : USD 0.4625

0
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 0.7643
10 : USD 0.5913
100 : USD 0.3931
500 : USD 0.3181
1000 : USD 0.2533
3000 : USD 0.2329
6000 : USD 0.2192
9000 : USD 0.2124

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2171
6000 : USD 0.2128

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH5524-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH5524-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : ENA0859A CPH5524 Bipolar Transistor CPH5524 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (390)380 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (24)13 pF CB (--115) (--230) mV V (sat)1 I =(--)1A, I =(--)50mA CE C B 90 130 mV Collector-to-Emitter Saturation Voltage (--240) (--650) mV V (sat)2 I =(--)2A, I =(--)100mA CE C B 160 240 mV Base-to-Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)100mA (--)0.88 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (30)35 ns on Storage Time t See speci ed Test Circuit. (230)300 ns stg Fall Time t (18)25 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 + + 100 F 470 F V = --5V V =25V BE CC I =10I = --10I =1A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo CPH5524-TL-E CPH5 3,000pcs./reel Pb Free No. A0859-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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