Ordering number : ENA1185A ECH8664R N-Channel Power MOSFET ECH8664R Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.5 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =3.5A 4.5 7.5 S DS D R (on)1 I =3.5A, V =4.5V 12.5 18 23.5 m DS D GS R (on)2 I =3.5A, V =4.0V 13 19 25 m DS D GS Static Drain-to-Source On-State Resistance R (on)3 I =2A, V =3.1V 14.5 21 27.3 m DS D GS R (on)4 I =2A, V =2.5V 14.5 24 34 m DS D GS Turn-ON Delay Time t (on) 270 ns d Rise Time t 850 ns r See speci ed Test Circuit. Turn-OFF Delay Time t(off) 3300ns d Fall Time t 1700 ns f Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =7A 2.1 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.0 nC Diode Forward Voltage V I =7A, V =0V 0.75 1.2 V SD S GS Switching Time Test Circuit V V =15V DD IN 4V 0V I =3.5A D V IN R =4.3 L D V OUT PW=10 s D.C.1% R g G ECH8664R P.G 50 S R =1k g Ordering Information Device Package Shipping memo ECH8664R-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1185-2/7