Ordering number : ENA2185B ECH8690 Power MOSFET ECH8690 Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Cutoff Voltage V(off) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transfer Admittance yfs V =10V, I=2A 4.2 S DS D R(on)1 I =2A, V=10V 42 55m DS D GS Static Drain to Source On-State R(on)2 I =1A, V=4.5V 53 74m DS D GS Resistance R(on)3 I =1A, V=4V 61 85m DS D GS Input Capacitance Ciss 955 pF Output Capacitance Coss V =20V, f=1MHz 58 pF DS Reverse Transfer Capacitance Crss 45 pF Turn-ON Delay Time t (on) 7 ns d Rise Time t 8.4 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 76 ns d Fall Time t 23 ns f Total Gate Charge Qg 18 nC Gate to Source Charge Qgs V =30V, V =10V, I =4.7A 3 nC DS GS D Gate to Drain Miller Charge Qgd 2.8 nC Diode Forward Voltage V I =4.7A, V=0V 0.82 1.2V SD S GS P-channel Drain to Source Breakdown Voltage V( ) I =-1mA, V=0V -60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =-60V, V=0V -1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Cutoff Voltage V(off) V =-10V, I=-1mA -1.2 -2.6V GS DS D Forward Transfer Admittance yfs V =-10V, I=-1.5A 3.4 S DS D R(on)1 I =-1A, V=-10V 73 94m DS D GS Static Drain to Source On-State R(on)2 I =-0.5A, V=-4.5V 97 135m DS D GS Resistance R(on)3 I =-0.5A, V=-4V 108 153m DS D GS Input Capacitance Ciss 790 pF Output Capacitance Coss V =-20V, f=1MHz 63 pF DS Reverse Transfer Capacitance Crss 45 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 8.8 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 84 ns d Fall Time t 29 ns f Total Gate Charge Qg 15 nC Gate to Source Charge Qgs V =-30V, V =-10V, I =-3.5A 2.6 nC DS GS D Gate to Drain Miller Charge Qgd 2.2 nC Diode Forward Voltage V I =-3.5A, V=0V -0.83 -1.2V SD S GS No.A2185-2/8